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Bin Yu

Dr. Bin Yu
Professor of Nanoengineering

Contact Information:

Degrees:

  • Ph.D. Electrical Engineering, University of California at Berkeley
  • M.S. Electrical Engineering, University of California at Berkeley
  • B.S. Electrical Engineering, Zhejiang University

Professional Background:

  • Professor, College of Nanoscale Science and Engineering, SUNY 
  • Consulting Professor, Dept. of Electrical Engineering, Stanford University 
  • University of California/NASA Center for Nanotechnology, Mountain View, CA 
  • Strategic Research, Advanced Micro Devices, Inc., Sunnyvale, CA 
  • University of California at Berkeley, Electronics Research Laboratory

Areas of Research:  

  • Energy-efficient “green” electronics
  • 2D nanostructure-inspired electronics 
  • Nano-photovoltaics & energy harvesting
  • High-capacity information storage
  • Next-generation interconnects
  • Emerging micro and nano devices 
  • Self-assembly of 1D/2D/3D functional nanostructures 

Research Interests:

Nano-Inspired “Green Electronics”: Energy efficiency will become ultimately important in future electronics. In traditional IC chips, signal processing, storage, and transmission are accompanied by considerable amount of heat dissipation, with power density increasing exponentially for each technology generation. Green electronics with extremely-low-power dissipation helps to boost system performance, portability, and reliability. We aim to develop novel concepts for “green electronics” at material, device, and micro-system design levels, aiming to reduce the power dissipation by orders of magnitude. Several strategies are being researched in my lab. In addition, we are exploring an array of nano-materials to demonstrate ultra-low-dissipative electronics, and understanding the system-level impacts.

Nano-Photovoltaics & Energy Harvesting: Emerging optically-active low-dimensional semiconductor nanostructures could potentially lead to high-efficiency, cost-effective energy harvesting. In our lab, we recently demonstrated prototypes of solar photovoltaic cells using a number of 2D nanostructures, including molybdenum disulfide (MoS2), tungsten disulfide (WS2), graphene oxide (GO), functionalized graphene (FG), and hexagonal boron nitride (hBN) as the new class of functional materials in different types of solar PV architectures, including bulk hybrid heterojunction, quantum-dot, Schottky-barrier, and p-n junction. The unique material features of 2D nanostructures allow for designing highly-engineered devices for solar energy harvesting.

High-Capacity, Nonvolatile Information Storage: Nanostructures exhibit intriguing electrical, thermal, and material behaviors that are different from traditional materials, potentially serving as the next-generation information storage media. My lab has been exploring a number of inorganic nanostructures, including metal oxides and chalcogenides, for applications in nonvolatile data storage, aiming to break through the barriers for silicon-based flash memories in terms of capacity, energy efficiency, scalability, and R/W speed. We are using nanostructures to demonstrate resistive-switching and phase-change memories, aiming to prototype advanced technology far more superior than the existing generations. In the long-term, we plan to extend the research into other applications including multi-functional devices and neuromorphic architecture design for cognitive processing.

Nano-Enabled Information Transmission (Next-Generation Interconnects): Signal transmission plays an increasingly important role in electronics, particularly in high-performance computing and communication. Speed performance, power efficiency, and scalability are key metrics. While metal (Cu)-based interconnects already face major scaling limits, emerging 1D/2D/3D nanostructures may serve as the new material platforms for future on-chip interconnects. We are exploring a number of strategies in developing interconnects based on “3D” graphene stack, graphene/Cu hybrid systems, and graphene heterostructures. These new conductor systems are expected to excel Cu in performance and reliability. The ultimate goal is to demonstrate energy-efficient, high-speed, and reliable “post-Cu” material systems for signal transmission.

Synthesis of 1D/2D/3D Functional Nanostructures: While the traditional thin-film techniques are facing key challenges and limitations in material scalability, atomic-level precise control, and interface quality, the unique features of nanomaterials lead to possibilities in developing processes with transformative nature. In my lab, we are developing atomic-scale assembly of nanostructures with different dimensionality using physical/chemical methods. These new materials may find a range of target applications in electronics, energy harvesting, sensing, data storage, and multi-functional integration, breaking the technological barriers well-recognized in traditional material processing.

Awards, Honors & Professional Services:   

  • Fellow, Institute of Electrical and Electronics Engineers (IEEE)
  • IEEE Distinguished Lecturer, Electron Device Society 
  • NASA Innovation Award
  • IBM Faculty Award
  • Editor, IEEE Electron Device Letters (2001-2007)
  • Editor, Nano-Micro Letters (2010-now)
  • Associate Editor, IEEE Transactions on Nanotechnology (2007-2010)
  • Guest Editor, IEEE TED/TNANO Joint Special Issue (2007)
  • Editor, Materials Research Society Symposium (2003)
  • Draft Committee, International Technology Roadmap for Semiconductors (ITRS) 
  • National Nanotechnology Initiative/SRC Consultative Group, Novel Devices and System Architectures
  • Administrative Committee, IEEE Nanotechnology Council
  • Nanoelectronics Committee, IEEE Nanotechnology Council 
  • Fellows Evaluating Committee, IEEE Nanotechnology Council 
  • Ex-Officio AdCom, IEEE Electron Device Society 
  • VLSI Technology & Circuit Committee, IEEE Electron Device Society
  • Guest Professor, Beijing University, China 
  • Guest Lecturer, Stanford University 
  • Guest Lecturer, University of California at Berkeley 
  • Adjunct Professor, Santa Clara University
  • Mentor, SRC University Research Program, Stanford University 
  • Mentor, SRC University Research Program, University of California at Berkeley 
  • Nominating Panel, IEEE George Smith Award
  • Senior advisory positions at venture capital, technology law firm, semiconductor chip companies, and nanotechnology startups in Silicon Valley, California
  • Review Panel, Stanford University Global Climate and Energy Project, National Science Foundation, Department of Energy, Department of Defense, NASA SBIR/STTR Program, Semiconductor Research Corporation
  • Service on Advisory/Organizational/Technical Program Committees of many international conferences and symposiums

Selected Accomplishments:

  • Lead researcher, the world’s first 10-nm gate length 3-D FinFET transistor (IEEE-IEDM’2002)
  • Lead researcher, the world’s first THz Si logic switch (IEEE-IEDM’2001)
  • Speaker, 80+ keynote/invited talks, seminars, and tutorials to international conferences, universities, industry, national labs, and professional societies
  • Inventor, 303 awarded U.S. patents 
  • Ranked #3 in “NSF Supported Investigators with Most Patents” (2011)

Selected Invited Talks:
  • National Technical University of Athens, Athens, Greece, July 2014
  • IEEE Non-Volatile Memory Technology Symposium, Minneapolis, MN, August 2013.
  • 22nd CMOC Symposium, Yale University, March 2013.
  • International Technology Roadmap for Semiconductors (ITRS), January 2013.
  • Nanyang Technological University, Singapore, November 2012.
  • IEEE Non-Volatile Memory Technology Symposium, Singapore, November 2012.
  • International Conference on Solid-State and Integrated Circuit Technology, Xi’an, China, October 2012.
  • IEEE Electronics Packaging Symposium, Niskayuna, NY, October 2012.
  • Applied Materials, April 2012.
  • IEEE EDS Distinguished Lecture, Santa Clara Valley Chapter, CA, April 2011.
  • Hong Kong University, June 2010.
  • Shanghai Jiao-Tong University, May 2010.
  • Electrochemical Society Meeting, Vancouver, Canada, April 2010.
  • Brookhaven National Laboratory, Upton, NY, October 2009. 
  • Conference on Integrated Circuits and Silicon Materials, October 2009.
  • Fudan University, October 2009. 
  • Beijing University, October 2009. 
  • IEEE VLSI Test Symposium, San Diego, CA, April 2008. 
  • Stanford University, April 2008.
  • SanDisk Corporation, San Jose, CA, March 2008. 
  • IEEE EDS Distinguished Lecture, Santa Clara Valley Chapter, CA, January 2008. 
  • Seoul National University, December 2007. 
  • Materials Research Society Fall Meeting, Boston, MA, November 2006. 
  • Intel Corporation, November 2007.
  • PIRA Nanoelectronics Conference, San Jose, CA, November 2006. 
  • International Conference on Solid-State Devices and Materials, Kanagawa, Japan, September 2006. 
  • American Institute of Chemical Engineers, February 2006. 
  • Paul Allen Center for Integrated Systems, Stanford University, January 2006. 
  • Texas Instruments, November 2005.
  • San Jose State University, October 2005. 
  • European Solid-State Device Research Conference, Grenoble, France, September 2005. 
  • University of California, Davis, July 2005.
  • American Vacuum Society, May 2005. 
  • University of California, Berkeley, February 2005. 
  • IBM Almaden Research Center, San Jose, CA, February 2005. 
  • University of California, Santa Cruz, December 2004. 
  • Santa Clara University, November 2004. 
  • IBM Zurich Research Laboratory, Zurich, Switzerland, November 2004. 
  • National Nanotechnology Initiative/NIST Workshop on Nanotechnology, Gaithersburg, MD, January 2004. 
  • Nanoelectronics & Nanophotonics Conference, Palo Alto, CA, September 2003. 
  • University of California, Berkeley, October 2002. 
  • Semiconductor Research Corporation (SRC), October 2002. 
  • IEEE Silicon Nanoelectronics Workshop, Honolulu, HI, June 2002. 
  • Beijing University, April 2002. 
  • International Nanotechnology/Nanoelectronics Symposium, October 2001. 
  • Applied Materials, July 2001.
  • Tokyo Institute of Technology, June 2001. 
  • NEC Research Lab, Sagamihara, Japan, June 2001. 
  • Conference Highlight Talk, Symposium on VLSI Technology, Kyoto, Japan, June 2001. 
  • SEMATECH, Austin, TX, May 2001. 
  • University of California, Berkeley, March 2000.

    Guest Panelist:

    Invited Panelist, Rump Session on “Nanotechnology in Future ICs”, International Conference on Solid State Devices and Materials, Yokohama, Japan, September 2006

    Invited Panelist, IEEE Gate Workfunction Engineering Workshop, Stanford University, Palo Alto, CA, June 2003

    Invited Panelist, Rump Session on “Emerging Nanoelectronic Devices”, Semiconductor Research Corporation Topical Research Conference, Austin, TX, October 2002

    Invited Panelist, Rump Session on “Novel Device Structures”, Symposium on VLSI Technology, Honolulu, HI, June 2002

    Invited Panelist, Rump Session on “Scaling Limit of Silicon”, Device Research Conference, Notre Dame, IN, April 2001

    Book & Book Chapters:

    M. Shanmugam, and B. Yu, “2D Semiconductor and Insulator Nanosheets in Photovoltaic Applications,” contributed book chapter in Encyclopedia of Nanotechnology, B. Bhushan (Ed), Springer, to be published.

    N. Jain and B. Yu, “Graphene‐Enabled Heterostructures: Role in Future‐Generation Carbon Electronics,” contributed book chapter in Handbook of Graphene Science, CRC Press, to be published.

    E. Kim, N. Jain, Y. Xu, and B. Yu, “Transistor and Logic using Graphene-On-Boron-Nitride (GOBON) Structure,” contributed book chapter in Graphene: Nanofabrication and Industrial Applications, N. Xi and K. Lai (Ed.), to be published.

    M. Shanmugam, and B. Yu, “Two Dimensional Layered Semiconductors: Emerging Materials for Solar Photovoltaics,” contributed book chapter in Solar Cell Nanotechnology, A. Tiwari, R. Boukherroub and M. Sharon (Eds.), ISBN 978-1-118-68625-6, John Wiley & Sons (2013).

    J. Kang, B. Gao, and B. Yu, “Metal-Oxide-Based Resistive-Switching Memory: Materials, Device Scaling, and Technology Design,” contributed book chapter in Nonvolatile Memories: Materials, Devices and Applications, S. M. Sze (Ed.), ISBN 1-58883-250-3, American Scientific Publishers (2012).

    X. H. Sun, B. Yu, G. Ng, and M. Meyyappan, “One-Dimensional Phase-Change Nanomaterials for Information Storage,” contributed book chapter, One-Dimensional Nanostructures, Lecture Notes in Nanoscale Science and Technology, Z. M. Wang (Ed.), ISBN 978-0-387-74131-4, Springer (2008).

    B. Yu and M. Meyyappan, “Inorganic Nanowires in Electronics,” contributed book chapter, Nano and Molecular Electronics Handbook, S. E. Lyshevski (Ed.), ISBN 978-0-8493-8528-5, CRC Press (2007).

    B. Yu (Principal Ed.), T. King, R. Lander, and S. Saito, “CMOS Front-End Materials, Devices, and Technology,” Proceedings of Materials Research Society (MRS) Symposium, ISBN 9781558997028 (2003).

    Most Recent Journal Publications:

    M. Shanmugam, R. Jacobs-Gedrim, E. S. Song, and B. Yu, “Two-Dimensional Layered Semiconductor/Graphene Heterostructures for Solar Photovoltaic Applications,” Nanoscale, 6, 12682 – 12689 (2014).

    R. B. Jacobs-Gedrim, M. Shanmugam, N. Jain, C. A. Durcan, M. T. Murphy, T. M. Murray, R. J. Matyi, R. L. Moore, and B. Yu, “Extraordinary Photoresponse in Two-Dimensional In2Se3 Nanosheets,” ACS Nano, 8, 1, 514–521 (2014).

    H. Guo, Y. Liu, Y. Xu, N. Meng, H. Wang, T. Hasan, X. Wang, J. Luo, and B. Yu, “Fluorinated Graphene and Hexagonal Boron Nitride as ALD Seed Layers for Graphene-Based van der Waals Heterostructures,” Nanotechnology, 25, 355202 (2014).

    N. Jain and B. Yu, “Encapsulation of graphene interconnects with 2D Layered Insulator for improved performance,” MRS Proceedings, vol. 1658, DOI: http://dx.doi.org/10.1557/opl.2014.496 (2014).

    N. Jain, R. B. Jacobs-Gedrim, and B. Yu, “Unipolar Switching Behavior in Highly Crystalline Hexagonal Boron Nitride,” MRS Proceedings, vol. 1658, DOI: http://dx.doi.org/10.1557/opl.2014.496 (2014).

    T. Bansal, C. A. Durcan, N. Jain, R. B. Jacobs-Gedrim, Y. Xu, and B. Yu, “Synthesis of Few-to-Monolayer Graphene on Rutile Titanium Dioxide,” Carbon, 55, 168-175 (2013).

    N. Jain, T. Bansal, C. A. Durcan, Y. Xu, and B. Yu, “Monolayer Graphene/Hexagonal Boron Nitride Heterostructure,” Carbon, 54, 396–402 (2013).

    M. Shanmugama, C. Durcana, R. Jacobs Gedrima, T. Bansalb, and B. Yu, “Oxygenated-Graphene-Enabled Recombination Barrier Layer for High Performance Dye-Sensitized Solar Cell,” Carbon, 60, 523–530 (2013).

    X. Lin, S. Lin, Y. Xu, A. A. Hakro, T. Hasan, B. Zhang, B. Yu, J. Luo, E. Li, and H. Chen, “Ab initio study of electronic and optical behavior of two-dimensional silicon carbide,” J. Mater. Chem. C, 1, 2131-2135 (2013).

    M. Shanmugam, N. Jain, R. Jacobs-Gedrim, Y. Xu, and B. Yu, "Layered Insulator Hexagonal Boron Nitride for Surface Passivation in Quantum Dot Solar Cell," Applied Physics Letters, 103, 243904 (2013).

    M. Shanmugam, C. A. Durcan, R. Jacobs-Gedrim, and B. Yu, “Layered Semiconductor Tungsten Disulfide: Photoactive Material in Bulk Heterojunction Solar Cells,” Nano Energy, 2, 419–424 (2013).

    N. Jain, C. A. Durcan, R. Jacobs-Gedrim, Y. Xu, and B. Yu, “Graphene Interconnects Fully Encapsulated in Layered Insulator Hexagonal Boron Nitride,” Nanotechnology, 24, 355202 (2013).

    M. Shanmugam, R. Jacobs-Gedrim, C. A. Durcan and B. Yu, “2D Layered Insulator Hexagonal Boron Nitride Enabled Surface Passivation in Dye Sensitized Solar Cell,” Nanoscale, 5, 11275-11282 (2013).

    T. Wang, B. Yu, Y. Liu, and M. J. Dean, “Investigation of Electrically Induced Cu Atom Migration on Graphene Surface: DFT and Experiment Study,” Applied Physics Letters, 103, 073104 (2013).

    M. Shanmugam, R. Jacobs-Gedrim, C. A. Durcan and B. Yu, “2D Layered Insulator Hexagonal Boron Nitride Enabled Surface Passivation in Dye Sensitized Solar Cell,” Nanoscale, 5, 11275-11282 (2013).

    T. Wang, B. Yu, Y. Liu, and M. J. Dean, “Investigation of Electrically Induced Cu Atom Migration on Graphene Surface: DFT and Experiment Study,” Applied Physics Letters, 103, 073104 (2013).

    B. Gao, B. Chen, F. Zhang, L. Liu, X. Liu, J. Kang, H. Yu, and B. Yu, “A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory,” IEEE Transactions on Electron Devices, 60, 1379-1383 (2013).

    M. Shanmugam, T. Bansal, C. Durcan, and B. Yu, “Schottky-Barrier Solar Cell Based on Layered Semiconductor Tungsten Disulfide Nanofilm," Applied Physics Letters, 101, 263902 (2012).

    R. B. Jacobs-Gedrim, C. A. Durcan, N. Jain, and B. Yu, “Chemical Assembly and Electrical Characteristics of Surface-Rich Topological Insulator Bi2Se3 Nanoplates and Nanoribbons,” Applied Physics Letters, 101, 143103 (2012).

    M. Shanmugam, C. A. Durcan, and B. Yu, “Layered Semiconductor Molybdenum Disulfide Nanomembrane Based Schottky-Barrier Solar Cells,” Nanoscale, 4, 7399-7405 (2012).

    Y. Liu, Y. Xu, X. Lin, H. Chen, S. Lin, B. Yu, and J. Luo, “Ab Initio Study of Energy-Band Modulation in Graphene-Based Two-Dimensional Layered Superlattices,” Journal of Materials Chemistry, 22, 23821-23829 (2012).

    G. Gupta, M. B. A. Jalil, B. Yu, and G. Liang, “Performance Evaluation of Electro-Optic Effect Based Graphene Transistors,” Nano scale, 4, 6365-6373 (2012).

    E. Kim, N. Jain, R. Jacobs-Gedrim, Y. Xu, and B. Yu, “Exploring Carrier Transport Phenomena in CVD-Assembled Graphene FET on Hexagonal Boron Nitride,” Nanotechnology, 23, 125706 (2012).

    M. Shanmugam, T. Bansal, C. A. Durcan, and B. Yu, “Molybdenum Disulphide/Titanium Dioxide Nanocomposite-Poly3-Hexylthiophene Bulk Heterojunction Solar Cell,” Applied Physics Letters, 100, 153901 (2012).

    Y. Xu, H. Gao, H. Chen, Y. Yuan, K. Zhu, H. Chen, Z. Jin, and B. Yu, “Electronic Transport Anisotropy of Buckling Graphene Under Uniaxial Compressive Strain: Ab initio Study,” Applied Physics Letters, 100, 052111 (2012).

    Y. Xu, K. Zhu, S. Yan, Z. Jin, Y. Wang, H. Chen, J. Luo, and B. Yu, “Quantum and Thermo-mechanical Noise Squeezing in Nanoresonators: A Comparative Study,” Applied Physics Letters, 100, 023105, (2012).

    M. Shanmugam, T. Bansal, C. A. Durcan, and B. Yu, “Multi-Layer Graphene Oxide/Cadmium Selenide Quantum Dot Coated Titanium Dioxide Heterojunction Solar Cell,” IEEE Electron Device Letters, vol. 33, no. 8, 1165-1167 (2012).

    N. Jain, T. Bansal, C. Durcan, and B. Yu, “Graphene-Based Interconnects on Hexagonal Boron Nitride (h-BN) Substrate,” IEEE Electro Device Letters, vol. 33, no. 7, 925-927 (2012).

    E. Kim, N. Jain, Y. Xu, and B. Yu, “Logic Inverter Implemented with CVD-Assembled Graphene FET on Hexagonal Boron Nitride,” IEEE Transactions on Nanotechnology, vol. 11, no. 3, 619-623 (2012).

    M. Shanmugam, T. Bansal, C. Durcan, and B. Yu, “MoS2/TiO2 Nanoparticle Composite Bulk Heterojunction Solar Cell,” Proc. IEEE NanoTechnology Conference (2012).

    N. Jain, T. Bansal, C. Durcan, and B. Yu, “Substrate Effect on Graphene-Based Interconnects,” Proc. IEEE NanoTechnology Conference (2012).

    E. Kim, N. Jain, Y. Xu, Y. Han, and B. Yu, “CVD-Graphene Complementary Logic on Ultra-Thin Multi-Layer Hexagonal Boron Nitride,” MRS Proceedings, DOI: http://dx.doi.org/10.1557/opl.2012.660, Volume 1407 (2012).

    T. Yu, E. Kim, N. Jain, and B. Yu, “Multi-Layer Graphene-Based Carbon Interconnect,” MRS Proceedings, DOI: http://dx.doi.org/10.1557/opl.2012.348, Volume 1407 (2012).

    T. Sohier and B. Yu, “Ultralow-Voltage Design of Graphene PN Junction Quantum Reflective Switch Transistor,” Applied Physics Letters, 98, 213104 (2011).

    E. Kim, T. Yu, E. S. Song, and B. Yu, “Chemical Vapor Deposition-Assembled Graphene Field-Effect Transistor on Hexagonal Boron Nitride,” Applied Physics Letters, 98, 262103 (2011).

    T. Yu, C. Kim, C.-W. Liang, and B. Yu, “Formation of Graphene P-N Junction via Complementary Doping,” IEEE Electron Device Letters, vol. 32, no. 8, 1050-1052 (2011).

    T. Wang, B. Yu, Y. Liu, Q. Guo, K. Sheng, and M. J. Deen, “Fabrication of Vertical stacked Single-Crystalline Si Nanowires Using Self-Limiting Oxidation,” Nanotechnology, 23, 015307 (2011).

    T. Yu, C.-W. Liang, C. Kim, E.-S. Song, and B. Yu, “Three-Dimensional Stacked Multilayer Graphene Interconnects,” IEEE Electron Device Letters, vol. 32, no. 8, 1110-1112 (2011).

    Y. Xu, Z. Guo, H. Chen, Y. Yuan, J. Lou, X. Lin, H. Gao, H. Cheng, and B. Yu, “In-Plane and Tunneling Pressure Sensors Based on Graphene/Hexagonal Boron Nitride Heterostructures,” Applied Physics Letters, 99, 133109 (2011).

    Y. Xu, H. Gao, M. Li, S. Guo, H. Chen, Z. Jin, and B. Yu, " Electronic Transport in Monolayer Graphene with Extreme Physical Deformation: ab initio Density Functional Calculation", Nanotechnology, 22, 365202 (2011).

    T. Yu, E. Kim, N. Jain, and B. Yu, “Carbon-Based Interconnect: Performance, Scaling and Reliability of 3D Stacked Multilayer Graphene System,” Tech. Dig. IEEE International Electron Devices Meeting, 159-162 (2011).

    T. Yu, E.-K. Lee, B. Briggs, B. Nagabhirava, and B. Yu, “Graphene/Copper Hybrid On-Chip Interconnect: A Reliability Study,” IEEE Transactions on Nanotechnology, vol. 10, no. 4, 710-714 (2011).

    J. Liu, B. Yu, and M. P. Anantram, “Scaling Analysis of Nanowire Phase-Change Memory,” IEEE Electron Device Letters, vol. 32, no. 10, 1340-1342 (2011).

    T. Yu, C.-W. Liang, C. Kim, and B. Yu, “Local Electrical Stress-Induced Doping and Formation of Monolayer Graphene P-N Junction,” Applied Physics Letters, 98, 243105 (2011).

    B. Gao, J. Kang, L. Liu, X. Liu, and B. Yu, “A Physical Model for Bipolar Oxide-Based Resistive Switching Memory Based on Ion-Transport-Recombination Effect,” Applied Physics Letters, 98, 232108 (2011).

    H. Zhang, L. Liu, B. Gao, Y. Qiu, X. Liu, J. Lu, R. Han, J. Kang, and B. Yu, “Gd-Doping Effect on Performance of HfO2 Based Resistive Switching Memory Devices Using Implantation Approach,” Applied Physics Letters, 98, 042105 (2011).

    Q. Guo, T. Wang, K. Sheng, and B, Yu, “An Optimization of Bosch Etch Process for Vertically Stacked Si Nanowires,” Journal of Materials Science: Materials in Electronics, 23, 1, 334-342 (2011).

    B. Chen, B. Gao, S. W. Sheng, L. F. Liu, X. Y. Liu, Y. S. Chen, Y. Wang, R. Q. Han, B. Yu, and J. F. Kang, “A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching Behaviors,” IEEE Electron Device Letters, vol. 32 no. 3, 282-284 (2011).

    Y. Liu, W. Wang, T. Wang, Q. Guo, K. Sheng, and B. Yu, “Tunable Bandgap of AB-Stacking Bilayer Graphene under Applied Electric Fields for Power Devices,” Proc. International Conference on Artificial Intelligence, Management Science and Electronic Commerce (AIMSEC), 6040-6043 (2011).

    B. Gao, H. Zhang, B. Chen, L. Liu, X. Liu, R. Han, J. Kang, Z. Fang, H. Yu, B. Yu, and D.-L. Kwong, “Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory,” IEEE Electron Device Letters, vol. 32, no. 3, 276-278 (2011).

    W. Wang, Y. Liu, T. Wang, K. Sheng, and B. Yu, “Graphene/Cu (111) Interface Study: the Density Functional Theory Calculations,” Proc. International Conference on Electronics, Communications and Control, 265-268 (2011).

    B. Briggs, B. Nagabhirava, G. Rao, R. Geer, H. Gao, Y. Xu, and B. Yu, “Electro-Mechanical Robustness of Monolayer Graphene with Extreme Bending,” Applied Physics Letters, 97, 223102 (2010).

    T. Yu, E.-K. Lee, B. Briggs, B. Nagabhirava, and B. Yu, “Bilayer Graphene System: Current-Induced Reliability Limit,” IEEE Electron Device Letters, vol. 31, no. 10, 1155-1157 (2010).

    H. Zhang, B. Gao, B. Sun, G. Chen, L. Zeng, L. Liu, X. Liu, J. Lu, R. Han, J. Kang, and B. Yu, “Ionic Doping Effect in ZrO2 Resistive Switching Memory,” Applied Physics Letters, 96, 123502 (2010).

    Most Recent Presentations:

    M. Shanmugam, R. Jacobs-Gedrim, E. S. Song, and B. Yu, “Functionalized Graphene: Material for Energy Harvesting,” Material Research Society Fall Meeting, Boston, MA, November 30 - December 5, 2014.

    F. Yang, N. Jain, and B. Yu, “CVD Growth of Few-to-Monolayer Hexagonal Boron Nitride Single Crystals on Copper,” Material Research Society Fall Meeting, Boston, MA, November 30 - December 5, 2014.

    E. S. Song, M. Shanmugam, F. Yang, R. Jacobs-Gedrim, N. Jain, and B. Yu, “Hybrid p-n Junction of MoS2 and Fluorinated Graphene,” Material Research Society Fall Meeting, Boston, MA, November 30 - December 5, 2014.

    F. Yang, R. Jacobs-Gedrim, and B. Yu, “Vapor-Solid Growth of Monolayer and Few-Layer Sb2Te3 Nanosheets,” Material Research Society Fall Meeting, Boston, MA, November 30 - December 5, 2014.

    M. Shanmugam, R. Jacobs-Gedrim, E. S. Song, and B. Yu, “2D Semiconductor/Graphene Schottky Barrier Solar Cells,” Material Research Society Fall Meeting, Boston, MA, November 30 - December 5, 2014.

    N. Jain, Y. Xu, and B. Yu, “Electrical Conduction Behaviors in Dual-Layer Graphene/Hexagonal Boron Nitride Heterostructures,” Material Research Society Fall Meeting, Boston, MA, November 30 - December 5, 2014.

    M. Shanmugam, R. Jacobs-Gedrim, E. S. Song, and B. Yu, “Hexagonal Boron Nitride: Layered Crystalline Dielectric for Surface Passivation in Quantum Dot Solar Cell,” Material Research Society Fall Meeting, Boston, MA, November 30 - December 5, 2014.

    E. S. Song, M. Shanmugam, N. Jain, F. Yang, R. Jacobs-Gedrim, and B. Yu, “CVD Growth of Monolayer MoS2,” AVS Hudson Mohawk Chapter Fall Meeting, Troy, NY, October 6, 2014.

    R. Jacobs-Gedrim, F. Yang, M. Shanmugam, N. Jain, E. S. Song, and B. Yu, “Low Pressure Chemical Vapor Deposition Synthesis of Chalcogenide Nanostructures,” AVS Hudson Mohawk Chapter Fall Meeting, Troy, NY, October 6, 2014.

    N. Jain, Y. Xu, and B. Yu, “Graphene/Hexagonal Boron Nitride Heterostructures,” International Conference in Nanosciences & Nanotechnologies, Thessaloniki, Greece, July 8-11, 2014.

    M. Shanmugam, Y. Xu, and B. Yu, “Solar Photovoltaic Cells Based on Multilayer Transition-Metal-Dichalcogenide,” International Conference in Nanosciences & Nanotechnologies, Thessaloniki, Greece, July 8-11, 2014.

    R. Jacobs-Gedrim, M. Shanmugam, Y. Kandel, N. Jain, C. Durcan, T. Murray, R. Moore II, K. Ryan, R. Matyi, C. Settens, A. Hmiel and B. Yu, “Extraordinary Photoconductive Properties of In2Se3 Nanosheets Applied to EUV Research,” AVS Hudson Mohawk Spring Meeting, Malta, NY, April 28, 2014.

    N. Jain and B. Yu, “Hexagonal Boron Nitride as Passivation Layer for Graphene Interconnects,” AVS Hudson Mohawk Spring Meeting, Malta, NY, April 28, 2014.

    R. Jacobs-Gedrim, M. Shanmugam, N. Jain, C. Durcan, T. Murray, R. Moore II, R. Matyi, and B. Yu, “Highly Responsive Photodetector Based on 2D Semiconductor In2Se3 Nanosheet,” Material Research Society Fall Meeting, Boston, MA, December 1-6, 2013.

    N. Jain, R. Jacobs-Gedrim, and B. Yu, “Unipolar Switching Behavior in Highly Crystalline Hexagonal Boron Nitride,” Material Research Society Fall Meeting, Boston, MA, December 1-6, 2013.

    M. Shanmugam, R. Jacobs-Gedrim, and B. Yu, “Hexa-BN Passivation for Bulk Heterojunction Solar Cells,” Material Research Society Fall Meeting, Boston, MA, December 1-6, 2013.

    M. Shanmugam, R. Jacobs-Gedrim, and B. Yu, “2D Layered Insulator Enabled Surface Passivation in Dye-Sensitized Solar Cell,” Material Research Society Fall Meeting, Boston, MA, December 1-6, 2013.

    N. Jain and B. Yu, “Graphene Interconnects Fully Encapsulated in 2D Layered Insulator,” Material Research Society Fall Meeting, Boston, MA, December 1-6, 2013.

    M. Shanmugam, R. Jacobs-Gedrim, and B. Yu, “Electrical Transport at Graphene / Multilayer Oxygenated Graphene Schottky Junction,” Material Research Society Fall Meeting, Boston, MA, December 1-6, 2013.

    N. Jain and B. Yu, “Electronic Behavior of Graphene/Hexagonal Boron Nitride Heterostructure,” AVS Hudson Mohawk Spring Meeting, Niskayuna, NY, April 24, 2013.

    C. Durcan, R. Jacobs-Gedrim and B. Yu, “Synthesis and Characterization of 3D Topological Insulator Nanostructures,” AVS Hudson Mohawk Spring Meeting, Niskayuna, NY, April 24, 2013.

    M. Shanmugam, R. Jacobs-Gedrim, C. Durcan and B. Yu, “2D Layered Semiconductor Based Photovoltaic Cells,” AVS Hudson Mohawk Spring Meeting, Niskayuna, NY, April 24, 2013.

    C. Durcan, R. Jacobs-Gedrim, N. Jain, and B. Yu, “Nanosheets of Layered Semiconductor Molybdenum Disulfide: CVD Growth and Characterization,” Material Research Society Fall Meeting, Boston, MA, November 25-30, 2012.

    R. Jacobs-Gedrim, C. Durcan, N. Jain, and B. Yu, “Bismuth Selenide Topological Insulator Nanoplates and Nanoribbons: Vapor-Solid Growth and Characterization,” Material Research Society Fall Meeting, Boston, MA, November 25-30, 2012.

    M. Shanmugam, C. Durcan, R. Jacobs-Gedrim, and B. Yu, “Two-Dimensional Layered Semiconductor / TiO2 Nanoparticles Based Bulk Heterojunction Solar Cells,” Material Research Society Fall Meeting, Boston, MA, November 25-30, 2012.

    T. Bansal, N. Jain, and B. Yu, “Metal-Catalyst-Free Growth of Graphene on High-K Dielectric,” Material Research Society Fall Meeting, Boston, MA, November 25-30, 2012.

    M. Shanmugam, C. Durcan, R. Jacobs-Gedrim, and B. Yu, “Layer Transferred MoS2 Nanomembranes in Schottky Solar Cell,” Material Research Society Fall Meeting, Boston, MA, November 25-30, 2012.

    M. Shanmugam, C. Durcan, and B. Yu, “Carrier Transport and Recombination at Multilayer Graphene Oxide/CdSe/TiO2 Interfaces in Heterojunction Solar Cell,” Material Research Society Fall Meeting, Boston, MA, November 25-30, 2012.

    N. Jain, C. Durcan, Y. Xu, and B. Yu, “Hexagonal Boron Nitride (h-BN): Functional, Scalable and Robust Gate Dielectric for High-Performance Graphene Electronics,” Material Research Society Fall Meeting, Boston, MA, November 25-30, 2012.

    B. Yu, “Phase-Change Nanowire: Synthesis, Materials Behavior, and Devices,” IEEE Non-Volatile Memory Technology Symposium, Singapore, October 31 - November 2, 2012.

    B. Yu, “Graphene Nanoelectronics: Overview from Post-Silicon Perspective,” International Conference on Solid-State and Integrated Circuit Technology, Xi’an, China, October 29 - November 1, 2012.

    B. Yu, “Graphene-Enabled Electronics: Devices and Interconnects,” Electronics Packaging Symposium, Niskayuna, NY, October 9-10, 2012.

    M. Shanmugam, T. Bansal, C. Durcan, and B. Yu, “MoS2/TiO2 Nanoparticle Composite Bulk Heterojunction Solar Cell,” IEEE NanoTechnology Conference, Birmingham, UK, August 20-23, 2012.

    N. Jain, T. Bansal, C. Durcan, and B. Yu, “Substrate Effect on Graphene-Based Interconnects,” IEEE NanoTechnology Conference, Birmingham, UK, August 20-23, 2012.

    J.F. Kang, B. Gao, B. Chen, L.F. Liu, X.Y. Liu, Z.R. Wang, H. Y. Yu, and B. Yu, “Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation For Multilevel Data Storage,” International Memory Workshop, Milano, Italy, May 20-23, 2012.

    E. Kim, N. Jain, Y. Xu, and B. Yu, “Layered Boron Nitride: Key Building Elements for Graphene Electronics,” Material Research Society Spring Meeting, San Francisco, CA, April 9-13, 2012.

    X. Lin, H. A. Ali, Y. Xu, H. Chen, and B. Yu, “Optical Properties of Graphene/BN and Graphene/Fluorinated Graphene Heterostructures,” Material Research Society Spring Meeting, San Francisco, CA, April 9-13, 2012.

    J. Liu, B. Yu, A. Anantram, “Theoretical scaling analysis of phase change memory,” Material Research Society Spring Meeting, San Francisco, CA, April 9-13, 2012.

    T. Yu, E. Kim, N. Jain, and B. Yu, “Carbon-Based Interconnect: Performance, Scaling and Reliability of 3D Stacked Multilayer Graphene System,” IEEE International Electron Devices Meeting, Washington D.C., December 5-7, 2011.

    E. Kim, N. Jain, Y. Xu, and B. Yu, “Carbon Electronics Implemented with Graphene-On-Boron-Nitride (GOBON) Material System,” Workshop on Frontiers in Electronics, San Juan, Puerto Rico, December 18-21, 2011.

    E. Kim, N. Jain, Y. Xu, Y. Han, and B. Yu, “CVD-Graphene Complementary Logic on Ultra-Thin Multi-Layer Hexagonal Boron Nitride,” Material Research Society Fall Meeting, Boston, MA, November 26-30, 2011.

    T. Yu, E. Kim, N. Jain, and B. Yu, “Multi-Layer Graphene-Based Carbon Interconnect,” Material Research Society Fall Meeting, Boston, MA, November 26-30, 2011.

    J. Liu, B. Yu, and M. P. Anantram, “Analysis of the RESET Performance of Nanowire Phase Change Memory,” IEEE Nanotechnology Conference, Portland, OR, August 15-18, 2011.

    Y. Liu, W. Wang, T. Wang, Q. Guo, K. Sheng, and B. Yu, “Tunable Bandgap of AB-Stacking Bilayer Graphene under Applied Electric Fields for Power Devices,” International Conference on Artificial Intelligence, Management Science and Electronic Commerce (AIMSEC), Deng Feng, China, August 8-10, 2011.

    C. Kim and B. Yu, “Carbon-Based Transistor Demonstrated with CVD Graphene on Hexagonal Boron Nitride (hBN) Substrate,” 71st Physical Electronics Conference, Albany, NY, June 14-17, 2011.

    N. Jain, T. Yu and B. Yu, “Complementary Doping for Logic Application with CVD-Assembled Monolayer Graphene,” 71st Physical Electronics Conference, Albany, NY, June 14-17, 2011.

    B. Yu, “Graphene Tunneling Barrier Enabled Logic Switch,” 219th Electrochemical Society Meeting, Montreal, Canada, May 1-6, 2011.

    C. Kim, B. Nagabhirava, T. Wang, Y. Han, and B. Yu, “Electrical/Optical Characterization of Bandgap-Engineered Bilayer Graphene,” Material Research Society Spring Meeting, San Francisco, CA, April 25–29, 2011.

    B. Nagabhirava and B. Yu, “CVD Growth of Graphene with Micro-Engineered Metal Catalyst,” Material Research Society Spring Meeting, San Francisco, CA, April 25–29, 2011.

    B. Nagabhirava, J. Liu, A. P. Manjeri, and B. Yu, “Phase-change GeTe Nanowire: Synthesis, Material Scalability, and Key Properties,” Material Research Society Spring Meeting, San Francisco, CA, April 25–29, 2011.

    J. Liu, B. Yu, and M. P. Anantram, “Multi-Scale Simulation of Nanowire Phase Change Memory,” Material Research Society Spring Meeting, San Francisco, CA, April 25–29, 2011.

    B. Nagabhirava, H. Gao, Y. Xu, and B. Yu, “3-D Non-Planar Monolayer Graphene Transistor,” Material Research Society Meeting, Boston, MA, November 29-December 3, 2010.

    T. Yu, B. Nagabhirava, and B. Yu, “Stacked Multilayer Graphene (SMLG): Basic Material and Electrical Properties,” Material Research Society Meeting, Boston, MA, November 29-December 3, 2010.

    H. Gao, Y. Xu, B. Yu, and Z. Jin, “Electronic Transport Properties of Graphene with Extreme Mechanical Deformation,” Material Research Society Meeting, Boston, MA, November 29-December 3, 2010.

    T. Yu, E.-K. Lee, B. Briggs, B. Nagabhirava, and B. Yu, “Bilayer Graphene System: Transport and Reliability,” 217th Electrochemical Society Meeting, Vancouver, Canada, April 25-30, 2010.