7/2/2014 12:04:40 PM

Compound Semiconductor: Researchers to share insights into sub 10nm chip design

Compound Semiconductor

III-V layers as next generation channel materials

At the SEMICON West 2014 conference in San Francisco next week, the newly merged SUNY College of Nanoscale Science and Engineering/ SUNY Institute of Technology based in Albany, USA, will be detailing some of the research underway at its technology development centres including the use of III-V compounds in next generation chip technology.

In his presentation 'Driving Transistor Technology Sub-10nm: Process and Equipment Direction' on the 9th July 2014, Christopher Borst, associate professor of nanoengineering at Suny CNSE, will explain how in parallel with work developing Si nanowire devices on 300 mm wafers, CNSE researchers are evaluating III-V layers as channel materials for next generation devices. CNSE has established an ecosystem for collaborative III-V work with industrial and research partner institutions. It is committed to developing modules for III-V gate stack, contact and source-drain engineering that are compliant with environmental guidelines while driving to device performance targets.

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