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Monday, May 16, 2011

Speaker (Affiliation)
Presentation Title and Abstract

INC7 US Nano Day

Greetings by host - Makoto Hirayama (CNSE)
Plenary - Mike Roco (NSF)
NNI Networks, chaired by Mike Roco
NNIN (National Nanotechnology Infrastructure Network) - Sandip Tiwari (Cornell) NNIN and National and International Research & Development
The National Nanotechnology Infrastructure Network (NNIN) is a National Science Foundation supported 14 university cooperative that supports nanotechnology research and development with its center in university based research laboratories. Its agenda includes experimental and computational support of advanced interdisciplinary science and engineering efforts, an extensive portfolio of educational activities to broaden and enhance participation and student development, build societal and ethical consciousness in the practitioners, and to help develop and enhance collaborative research frontiers.
NNIN's impact on the science landscape can be gauged from the nearly 6000 advanced users of the facilities representing nearly 200 academic institutions, and 400 small and large companies. 20-25% of experimental science and engineering PhD students and ~10% of SBIR grantees of USA employ the facilities to advance their own interests.
NCN (Network for Computational Nanotechnology) - Alejandro Strachan (Purdue)  
NACK (National Nanotechnology Applications and Career Knowledge) - Osama Awadelkarim (Penn State) NSF National ATE Center for Nanotechnology Applications and Career Knowledge (NACK)
The NSF National Nanotechnology Applications and Career Knowledge (NACK) Center is focused on US nanotechnology workforce development. Its mission has four components: (1) building partnerships in nanotechnology education among research universities, community and technical colleges, and 4-year colleges/universities through Resource Sharing (courses, programs, laboratory facilities, staff); (2) assisting community colleges in the development of nanotechnology education programs which prepare students for careers in a wide spectrum of industries; (3) insuring that US nanotechnology education is a platform for professional development throughout a student’s career; and (4) providing the means to enable this broad nanotechnology education at 2-year community and technical colleges in every region of the US. To achieve these goals, NACK has assisted community colleges and research universities across the US in the setting up of regional two-year degree institutions/research university nanotechnology partnerships and has created, with its Industry Board, a suite of 6 sophomore-level courses covering nanotechnology synthesis, fabrication, characterization, and applications. These courses are arranged in units, which may be used in part or in their entirety. They are available without charge in video and power-point forms at the NACK website. Other NACK support includes introductory modules for secondary education use, web access to characterization tools, and a nanotechnology certificate program. 
NRI Clusters, chaired by Mike Roco  
INDEX (Institute for Nanoelectronics Discovery and Exploration) - Ji Ung Lee (CNSE, UAlbany) INDEX-the Institute for Nanoelectronics Discovery and Exploration

Abstract: The Institute for Nanoelectronics Discovery and Exploration (“INDEX”) embodies a comprehensive, inter-disciplinary, multi-university, long-term research approach to investigate novel paradigms that transcend electronic charge as a computing device state variable to surmount expected CMOS scaling limits. The INDEX strategic technical focus has evolved over the years in an effort to find the most promising device and architecture concepts. Our initial efforts focused on exploring new state variables that have the potential to allow multi-functionality and reconfigurality, unlike the rigid architecture that defines modern CMOS devices. Currently, we have identified two device concepts based on graphene that have the potential to allow significant performance improvements over CMOS. They are Graphene PN Devices and All Spin Logic (ASL). Graphene PN Junctions are not rectifying junctions because graphene itself is gapless. Instead, optics-like manipulation of carriers is possible at the junction interface. Thus, terminologies such as focusing and defocusing, total internal reflection and wave guiding are used to describe these devices. ASL is the first logic concept that does not require conversion from spin to charge. Inherently, it is also a non-volatile memory. In this talk, we will provide an overview of our efforts to realize these devices.

INDEX includes a world-class team of investigators, including Georgia Tech, Harvard University, MIT, Purdue University, University of Virginia, Columbia and UAlbany. INDEX has generated significant public and private resources to leverage seed funding provided by NERC to ensure the establishment of the state of-the-art facilities and the availability of the funding necessary to perform a systematic and thorough assessment of the device paradigms proposed. The resources leveraged by INDEX include significant funding from the federal government, the state of New York, and NERC member companies.

MIND (Midwest Institute for Nanoelectronics Discovery) - Alan Seabaugh (Notre Dame) Recent progress in the development of III-V and graphene tunnel field-effect transistors
Tunnel field-effect transistor (TFETs) are metal-oxide semiconductor (MOS) devices that use the gate electrode to control the band-overlap in a Zener tunnel junction. In TFETs, the subthreshold swing can be less than the thermal limit of 60 mV/decade, allowing lower supply voltages for the same on/off current ratio, and lower power dissipation. As part of the Semiconductor Research Corporation’s Nanoelectronic Research Initiative, these transistors are being developed for beyond-CMOS logic applications. This presentation will outline the transistor approaches and experimental demonstrations in InGaAs, InAs/InP, InAs/AlGaSb, and graphene nanoribbon TFETs and clarify the relationship between current models and measurements.
SWAN (South West Academy of Nanoelectronics) - Frank Register (UT Austin) Southwest Academy of Nanoelectronics (SWAN)
The Southwest Academy of Nanoelectronics (SWAN) is centered at the Univeristy of Texas at Austin and includes members from the University of Texas at Dallas, Texas A&M, Rice, the University of Maryland and North Carolina State University. Current SWAN research is focused around the Bilayer Pseuodospin Field Effect Transistor (BiSFET) concept which offers the possibility of high-speed and ultra-low power consumption. The BiSFET is based on the possibility of room temperature superfluidity in graphene bilayers separated by a thin dielectric. SWAN has established a synergistic program involving theory and experiment to determine if the postulated superfluid condensate can indeed survive and be gated at room temperature. We are also exploring related device concepts based on gated single particle 2D-to-2D tunneling in such graphene bilayers, and single and many-particle coupling in Topological insulators. While these device concepts serve as the focal point for SWAN research, this research, which includes significant efforts toward synthesis of graphene and of compatible ohmic contacts and high- and low-k dielectrics, and process integration, should have broad impact for graphene devices in general. Similarly, our circuit level modeling of the BiSFET has led the way in translating novel physics into compatible beyond-CMOS circuit architectures.
WIN (Western Institute of Nanoelectronics) - Kang Wang (CNSI, UCLA) Perspective on Spintronics undertaken at the Western Institute Of Nanoelectonics (WIN)
The Nanoelectronics Research Initiative (NRI), a consortium of companies in the Semiconductor Industry Association, is seeking to accelerate research in nanoelectronics for the benefit of the semiconductor industry. Semiconductor Research Corporation has formed a subsidiary -- Nanoelectronics Research Corporation (NERC) - to administer the NRI research program. The fifteen-year goal of NRI is to demonstrate novel computing devices with critical dimensions below 10 nanometers and to exercise them in simple computer circuits. These results will enable the semiconductor industry to extend Moore's Law far beyond the year 2020 when the potential limits of the current industry technology known as CMOS may be approached. As part of the NRI program, the WIN Center was established in 2006 to specifically focus on spin based emerging devices for logic, memory and interconnect applications. This talk will provide a perspective on spintronics and its potential impact on non-volatile electronics to further enhance and complement electronics for the semiconductor, aerospace & defense, health care, biotechnology and telecommunication industries. 
Closing, Mike Roco
CNSE Technical Visits

Tuesday, May 17, 2011

Speaker (Affiliation) Presentation Title and Abstract
Opening Address of INC7
Chair Mike Roco (NSF, US)
Europe-Gisele Roesems (European Commission)  
Japan- Teruo Kishi (President, AIST)  
USA-Paolo Gargini (Intel, SIA/TSC)  
INC7 Plenary Talk
Chair, Toshihiko Kanayama (AIST)
Kazunobu Tanaka (JST) Nanotechnology – Evolution toward systems
Prior to my talk I would like to express our heartfelt thanks to the people from Europe, the US and other countries for their kind sympathy and condolence conveyed to our people stricken by the Great East Japan Disaster on March 11, 2011.
In this talk, firstly, I look back the last 10 years for the Japan S&T Basic Plans focusing on the eight promotion areas, and try to evaluate a technological impact of each area. The highest impact of Nanotechnology/Materials area has been confirmed in comparison to other seven areas.
Secondly, it is argued that nanotechnology is now being evolved toward “systems”, where scientific, technological, and policy evolution are involved. Safety and security, or EHS issues, will be of main concern in any systems in the future.
Finally, it is pointed out that geographical extension of the nanotechnology community has rapidly been made in Asian countries, which makes it difficult for Japan to represent a whole Asia with regard to nanotechnology as well as nanoscience.
Session Tu-1: Regional update
Chairs, Michel Brillouët (EU), Toshio Baba (Japan), Yumiko Takamori (US)
Europe (government) - Gisele Roesems (EC)  
Japan (government) - Yoshihiro Oishi (CAO) Japan’s R&D Strategy of Nanotechnology
The promotion system of science and technology policy in Japan and strategy for nanotechnology are addressed at the beginning of the presentation. Then, the trends of budget related with nanotechnology during the 3rd science and technology basic plan are introduced with the budget for nanotechnology centers and networks. After that, topics in nanotechnology in Japan are shown including the main achievements during the 3rd basic plan for international cooperation. New funding program for next generation world-leading researchers is also described. Finally, for the 4th science and technology basic plan in Japan (2011-2015), its direction and the positioning of nanotechnology are mentioned briefly.
USA (government) - Mike Roco (NSF/NNI) Lessons learned in the last decade and nanotechnology perspective to 2020
A global scientific and societal endeavor was set in motion by the nanotechnology vision formulated in the report “Nanotechnology Research Direction” (NSTC 1999, Springer 2000) that inspired the National Nanotechnology Initiative (NNI) and other national and international R&D programs. This presentation outlines the outcomes in the last ten years, what has worked and was not, the 2010 worldwide R&D programs of about $18 billion underpinning about $300 billion products incorporating nanotechnology, and most importantly how we prepare now for the future. These topics are summarized in a recent report “Nanotechnology Research Directions for Societal Needs in 2020” (NSF/WTEC report, Springer 2010, The report aims to redefine the R&D goals for nanoscale science and engineering integration, and to establish nanotechnology as a general-purpose technology. It will be imperative over the next decade to focus on four distinct aspects of nanotechnology development: better comprehension of nature and communication leading to knowledge progress; technology, economic and societal solutions leading to material progress; international collaboration on sustainable development and quality of life leading to global progress; and people working together for equitable governance leading to moral progress. INC conferences have promoted these goals, and INC7 is a place to discuss the new frontiers to 2020 and how to reach them.
Europe (industry) - Andreas Wild (ENIAC JU)
Japan (industry) - Michiharu Nakamura (Hitachi) Challenges of Japanese Manufacturing Industries in a Sustainable Society
Japan intends to undertake a key role in the global economy as a knowledge-based manufacturing country. We emphasize breakthrough technology which is incubated and developed through long-term R&D in academic societies, national research institutes and industry. Such technology is the basis of knowledge-based manufacturing and opens a new horizon of problem-solving innovation.
Nanotechnology has been prioritized for many decades as a core technology in science and technology policy in Japan. Universities and national institutes in Japan have produced a number of revolutionary leading-edge technologies, and encouraged industry to launch new generations of products and new businesses in devices and materials. Today, more than ever before, the important role of academia-industry collaboration in maintaining a position as a front runner in innovation, is being recognized. Our challenges are to provide solutions for social issues such as climate change, water shortage, aging population, and natural disasters by using nanotechnology. System and service approaches as well as components and material businesses will be highlighted.
In the global market, “local production and local consumption” is a general trend, where global supply chains of products and technology are extremely important. Japan intends to continue providing key components, materials and manufacturing equipment originating from nanotechnology initiatives to the global market.
USA (industry) - Paolo Gargini (Intel, SIA/TSC)  

Conference Keynote speech

Chair, P. Gargini (US)

"What did I Explore in Half a Century of Research Putting Quantum Principles into Practice?"
Leo Esaki
Abstract: Esaki and his coworkers’ pioneered research on superlattices and quantum wells in the 1970s and the early 1980s, setting off a wide variety of experimental and theoretical investigations worldwide, resulted in not only the observation of a number of intriguing new phenomena such as differential negative resistance, high electron mobilities, large excitonic binding energies, large Stark shifts, distinct Wannier-Stark ladder and Bloch oscillation due to electric quantization, but also the emergence of a new class of transport and optoelectronic devices such as high electron-mobility transistors (HEMT), high-speed resonant tunnel diodes, high-performance injection lasers with quantum wells, and quantum cascade lasers.

Since the superlattice periods or the quantum well-widths are on the nanometer scale, the studies have served as the precursor to a variety of nanostructures.
Session Tu-2: Advanced and beyond CMOS, and new architecture
Chairs, R. Dekeersmaecker (EU) and Ryosho Kuwae (Japan)
Paul Heremans (IMEC) TFET on the roadmap of CMOS?
A challenging problem for further scaling of CMOS technology is the power crisis. To scale the supply voltage below 0.8 V, silicon will have to be replaced by high mobility semiconductors at the 15 nm node. Furthermore, also the threshold voltage will have to scale. The TFET concept holds promise to realize this VT scaling. In this presentation, we will assess the true opportunities and remaining challenges to implement the TFET in future generations of CMOS.
Yoshiaki Saito (Toshiba) Spin-based MOSFET: a promising candidate for beyond CMOS device using nanotechnology
A spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising candidate for beyond complementary metal-oxide semiconductor (CMOS) device using nanotechnology. Recently, we succeeded in observing the spin-dependent transport through Si with local measurement configuration due to reduction in the contact resistance in ferromagnetic metal (FM) /thin insulator tunnel barrier (I)/Si junctions [1-3]. Towards practical application, we also proposed a novel spin-based MOSFET “Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)” which offers non-volatile memory and transistor functions that are CMOS compatible and have high endurance and a fast write time. STS-MOSFETs with Heusler alloy (Co2FeAl0.5Si0.5) were prepared and reconfigurability of the novel spintronics-based STS-MOSFET was successfully realized in the transport properties. The device showed magnetocurrent (MC) and write characteristics with an endurance of over 105 cycles. The overall properties of the STS-MOSFETs show promising potential for future reconfigurable integrated circuits based on CMOS technology.
This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) and the Grant-in-Aid for Scientific Research (B)(22360002)from JSPS.
[1] T. Marukame and Y. Saito et al., IEDM (2009) 215.
[2] T. Inokuchi and Y. Saito et al., Symposium on VLSI Technology (2010) 119.
[3] Y. Saito et al., accepted to Thin Solid Film ( Published online at
[4] T. Tanamoto and Y. Saito et al., J. Appl. Phys. 109 (2011) 07C312.
Supratik Guha (IBM) Energy efficient computing technologies for the future
Energy efficiency is a a singular challenge for future (and present) computing technologies. High performance computing uses optical interconnect components with increasing penetration, and a future exa-scale computer will require the extensive use of integrated silicon photonics transceivers. It is also clear that the silicon transistor is reaching limits of complexity and voltage scaling. I will talk about two topics: (i) silicon photonics and its use in future high performance computing, and, (ii) an effort underway at IBM in exploring carbon nanotube transistors as a drop-in replacement for Si MOSFETs at the 5 nm technology node. Rather than a physics practitioner immersed in these individual fields, I will offer the perspective of a technology customer who will describe where we are and what needs to happen.
Session Tu-3: Low power electronics - To promote international collaboration
Chairs, Michel Wolny (Europe), Makoto Hirayama (US)
Olivier Faynot (Leti) Low power electronics with SOI
Recent device developments and achievements have demonstrated that planar undoped channel Fully depleted SOI devices are becoming a serious alternative to Bulk technologies for 20nm node and below. Through its activities, CEA-LETI has proven this planar option to be easier to integrate than the non planar devices like FinFET. This paper gives an overview of the main advantages provided by this technology, as well as the key challenges that need to be addressed. The electrostatic integrity, the drivability, the within wafer variability are addressed through silicon data (down to 18nm gate length) and TCAD analyses. Scalability of this technology has also been investigated down to 10nm gate length.
Ken Takeuchi (University of Tokyo) Storage Class Memory and Memory System Innovation
- International Collaboration for Material, Device, Circuit, Signal Processing and OS Integration -

The storage class memory (SCM) and NAND flash memory integrated Solid-State Drive (SSD) is expected to boost the storage performance by x 10 – 100 and revolutionize the computer architecture. The SCM & NAND-integrated SSD is also expected to save the power consumption of data centers. The candidates for SCM are ReRAM, PCRAM and MRAM. The intense international collaboration for the integration of material, device, circuit, signal processing and OS is required to realize the highly reliable, high-speed and low power storage system. This talk will cover all aspects of key challenges and new technologies of the new memory system development such as 1) SCM : new device structure with new material, 2) 3D-SSD with new low power circuits, 3) Signal processing technologies such as ECC and 4) OS optimization. The regional strength/weakness as well as the required international cooperation and collaboration are also discussed.
Rahul Sarpeshkar (MIT) Ultra Low Power Biomedical and Bio-inspired Systems
Nature is a great analog and digital circuit designer. She has innovated circuits in the biochemical, biomechanical, and bioelectronic domains that operate very robustly with highly imprecise parts and with incredibly low levels of power. This talk will discuss how analog, RF, and bio-inspired circuits and architectures have led to and are leading to novel systems for ultra-low-power biomedical applications. Examples from systems for bionic ear processors for the deaf, brain–machine interfaces for the blind and paralyzed, body sensor networks for cardiac monitoring, and in circuits for systems biology and synthetic biology will be presented.
Conference Dinner, CNSE's Albany NanoTech Complex

Wednesday, May 18, 2011

Speaker (Affiliation)
Presentation Title and Abstract
Session We-1: More than Moore, Bridge to...
Salvo Coffa (ST Microelectronics)
Tetsuya Asai (Hokkaido Univ.) More-than-Moore, Bridges to Neuromorphic Computing
 This talk gives an overview of "neuromorphic" computing systems in terms of More-than-Moore concepts (existing CMOS + emerging research devices). I will focus on two hot topics in this research field: i) non-volatile analog synaptic devices, and ii) positive use of noise and fluctuations. For i), I will introduce a possible synaptic device that connects neural elements electrically through nonvolatile resistor. The device consists of a bipolar ReRAM, a capacitor, and two nMOS FETs. The synaptic conductance is updated in accordance with spike timing differences between pre- and post neuronal devices, which mimics a biological process called spike-timing-dependent plasticity (STDP) in the brain. For ii), noise and fluctuations are usually considered as “obstacles” in the operation of both analog and digital circuit systems, and most strategies to deal with them are focused on the suppression. I will give an overview of neural systems that employ different strategies, i.e., neural strategies that can “exploit” the properties of noise to improve the efficiency of operations, to explore possible opportunities for emerging research devices.
Jim Weiland (Univ. Southern California) Nanotechnology applied to artificial vision
Retinitis pigmentosa (RP) and age-related macula degeneration (AMD) lead to the degeneration of the light sensitive cells of the eye (photoreceptors), resulting in a significant visual deficit for the afflicted individual. In a retina affected by RP or AMD, the photoreceptors are absent, but other cells of the retina remain present in large numbers. Current clinical trials are investigating the feasibility an electronic device that will electrically stimulate the remaining cells of the retina to generate visual perceptions. In tests with human volunteers with little or no light perception, we have used a prototype retinal prosthesis to create the perception of discrete spots of light. Some subjects can read letters. The current focus is being shifted to the development of a high-resolution retinal prosthesis which will be capable of stimulating the retina at thousands of individual points. Simulations of prosthetic vision predict that 1000 electrodes will be needed to restore visual function such as face recognition and reading. Nanotechnology will be critical to achieving this goal and several nanoscale approaches are under development that will addresses key technology gaps. In addition, discrete, autonomous photosensitive nanoswitches can potentially restore near normal vision by targeting individual cells.
Session We-2: More than Moore, Bridge to...

Chairs, Toyohiro Chikyo (Japan), James Hutchby (US)
Roel Baets (U.Gent) Silicon Nanophotonics in Europe: Research and Technology Platforms
Silicon photonics is emerging as a key generic technology for a broad range of applications. It uses the technology base of advanced CMOS to build complex and highly dense photonic circuits either in combination with electronic circuitry or for stand-alone photonic IC’s. While the smallest dimensions in photonic components are relatively large as compared to their electronic counterparts – of the order of a few 100 nm, the accuracy of these dimensions needs to be very precise – of the order of a few nm. Therefore there is a good match between the technological needs of photonic ICs and the capabilities of advanced nano-electronic technology.
Silicon photonics is finding its way into the marketplace today. Early products include active optical cables with 40 and 100 Gb/s data capacity and specific products for the fiber-optic telecom market. But the prospects go far beyond that. In the next 5 to 10 years silicon photonics may provide a viable road towards solving the challenges associated with interconnect in multi-core processor systems. It may also be of key importance to reduce the power consumption in data centers. And it may be at the very heart of smart sensing functionality in lab-on-chip systems, in biomedical point-of-care systems and even in commodity systems.
One of the challenges is to build the supply chain for this new field. There is a need for a foundry-like approach all the way from R&D up to industrial high volume manufacturing. The initiatives in Europe that pave the way for foundry-based silicon nanophotonics will be discussed.
H. Fujita (Univ. Tokyo) MEMS-based Heterogeneous systems Integration
With the saturation in the miniaturization of microelectronics as well as the maturity of MEMS, now further advance in micro electronics is pursued by More-than-Moore approach. Here, a heterogeneous integration technology combining various fabrication methods is proposed for achieving the breakthrough. We can utilize micromachining, VLSI technology, compound semiconductor technology, nano technology, bio technology, organic/inorganic chemistry, printing and molding to create a versatile manufacturing technology over the scale and material variety. This talk deals with the concept towards the heterogeneous integration of devices and functionality into micro/nano systems and the examples of current development.
Toshihiro Kamei (AIST) Towards fully integrated laser-induced fluorescence (LIF) detection devices for point-of-care microfluidic biochemical analysis
Miniaturization and integration of laser-induced fluorescence detection system is prerequisite to exploit potential point-of-care benefits of microfluidics. Most of integrated fluorescence detectors, however, suffer from high limit of detection (LOD) compared to conventional optical system that consists of discrete optical components, which is mainly due to higher laser light scattering of integrated optics rather than detector sensitivity. We have reduced background (BG) photocurrent of an integrated hydrogenated amorphous Si (a-Si:H) fluorescence detector due to laser light scattering, significantly improving a LOD and demonstrating capability of detecting single molecular DNA when combined with polymerase chain reaction (PCR). Now we are working towards integration of blue-green InGaN laser diode (LD)/LED and micro-optical system to construct fully integrated LIF devices under a FIRST program "microsystem integration" (Leader: Prof. Esashi). Although advantages using a-Si:H include monolithic integration on heterogeneous materials, we are pursuing for alternative approach based on surface activated bonding. The integrated a-Si:H-InGaN based detection-excitation device will be capable of high sensitivity detection of visible fluorescence emitted from practical labeling dye, making it ideal for application to point-of-care microfluidic biochemical analysis.
Axel Scherer (Cal Tech) Silicon Integration from the Microscale to the Nanoscale
Silicon has emerged as an attractive material for many applications beyond its original use in microelectronic circuits. For example, silicon photonics has emerged as a platform to integrate optical data communications onto compact microchips, and MEMS has evolved to meet many needs in mechanical and fluidic applications. Here we describe the evolution of increasingly complex integrated micro-devices in which we combine the electronic, optical, thermal and mechanical properties of silicon. We will describe how the optical and mechanical behavior of silicon structures can change in profound ways when these are reduced to nanoscale dimensions. Great opportunities as well as challenges emerge when device geometries are reduced to below 5nm, where remarkable changes in the mechanical and optical performance can be observed. We are heading towards a regime where the properties of silicon can be controlled by geometry rather than chemistry.
Session We-3: Societal Challenges
Chairs, Gilbert Declerck (Europe), Kos Galatsis (US)
Heinz Gerhäuser (FhG/IIS) Technologies for the Ageing Society
The aging society and the resulting demographical changes present one of the biggest challenges of the 21st century. To successfully cope with these emerging problems requires immediate action e.g. the development of assistance systems. Technical assistance systems will help elderly people to remain active at home, on the road, as well as in communication with their environment. Since technology-based innovations can only be successful if they actually reach people, an interdisciplinary approach is followed to support engineering and science chairs and bodies with concept development and evaluation.
The presentation reports on research topics of Fraunhofer. Particular work conducted at several Fraunhofer Institutes focus on topics like “mobility” and “smart home”. Both topics are essential for living longer an autonomous and self-determined life.
Key issues for most developments are battery powered lowpower integrated circuits, wireless short range communication circuits and ease of use. Our aging society requires affordable products and services. 
Kenji Hata (AIST) Challenges and Future for Single-walled Carbon Nanotubes
Single-walled carbon nanotubes (SWNT) forests represent an important field in nanotube research. Water-assisted CVD now known as the “super-growth”[1] technique stands as one representative method to grow SWNT forests in a short time.
Here, I will present the current status to realize economical and industrial scale mass productions, and to develop new applications. I would introduce the first pilot plant of SWNT forest (spec. 100g/hour ) that can continuously grow SWNT forests on 50 cm square substrates fed to a furnace [ref patent] by a belt-conveyer.
The SWNTs within the forests possess exceptional properties of high purity, high surface area, long length, and alignment. These properties has opened up new opportunities for CNTs, exemplified by CNT black body absorbers [2], CNT-MEMS [3], stretchable conductors [4], high power and density super-capacitors [5], biofuel cells [6],temperature invariant viscoelastic CNT materials [7], and strain sensors [8] for human motion detection.
With the launch of the pilot plant of SWNT forest, some of these applications are expected to be realized in real commercial products soon. My perspectives regarding industrialization of SWNTs forests would be presented.
References: [1] Science 2004, 306, 1362, [2]PNAS, 106 (15), 6044-6047 (2009), [3] Nature Nanotechnology 3.289 (2008), [4] Science, 321, 1468(2008), Nature Materials, 8 (6), 494-499 (2009), [5] Advanced Materials 22, E235 (2010), JACS 132, 18017-18019 (2010),[6] JACS 133, 5129–5134 (2011), [7] Science, 330 (6009), 1364-1368 (2010), [8] Nature Nanotechnology DOI: 10.1038/NNANO.2011.36
Christina Luscombe, (Univ. Washington) Nanotechnology for Solar Energy Collection and Conversion
Due to increased environmental concerns and our ever-growing energy demands, there is a great need to develop renewable sources of energy. Solar energy in particular is a promising energy source because it is readily available, free from geopolitical tensions, and not a threat to the environment through pollution. Solar energy could facility the US to become energy independent, but it could also provide economic opportunities if the US can maintain leadership in this field of research. Unfortunately, there still are many obstacles that need to be overcome for solar technology to be used to meet our future energy needs. Namely, the cost of existing devices is not competitive against current sources of energy which include fossil fuels. For solar energy to become economically viable, substantial scientific breakthroughs need to be made. Nanotechnology could be an enabling technology which will help this happen. The use of nanoscale structures (both in terms of morphology and particles) will be discussed as they pertain to building devices for energy storage as well as collection.
Session We-4: Nano-Materials Safety - To promote international collaboration
Chairs, Masahiro Takemura(Japan) and Dave Seiler(US)
Gaku Ichihara (Nagoya Univ.) EHS Researches on Manufactured Nanomaterials in Japan
Recent activities of Environment, Health and Safety (EHS) researches on manufactured nanomaterials in Japan will be introduced. National Institute of Advanced Industrial Science and Technology and University of Occupational and Environmental Health conducted 28 day-inhalation studies using rats for nickel oxide, fullerene, multi-walled carbonnanotubes (MWCNT) and single-walled carbonnanotubes, as well as intra-tracheal instillation studies on selected nanomaterials. They are reporting risk assessment of titanium dioxide, fullerene, MWCNT based on their own experiments as well as reviewing other publications. National Institute of Health Sciences (NIHS) is conducting long-term studies to investigate carcinogenicity, systemic effects and effect of the shapes of selected nanomaterials. They are also conducting animal studies by dermal exposure and inhalation exposure as well as developing Absorption, Distribution, Metabolism and Excretion methodology. National Institute for Materials Science is investigating biological influences of manufactured nanomaterials in vitro and participating in a round robin study of International Nano-EHS Harmonization in collaboration with experts in EU and USA. Nagoya University is conducting exposure assessment and epidemiological studies in factories handling titanium dioxide. The current situation of the above projects will be shown and finally which types of researches are further needed will be discussed.
Kalman Migler (NIST) Nanomaterial Environmental, Health and Safety (Nano-EHS) An integrated program from measurement science through documentary standards to reference materials
Nanomaterials hold amazing promise. However, the benefits of nanomaterials may never be realized due to public fears of potential hazards to human health and the environment and reluctance of US industry to invest in potentially harmful technologies. The problem is that nanomaterials and products that incorporate nanomaterials pose unknown risks throughout the stages of their life cycles to people and the environment. Science-based lifecycle risk assessment and risk management is required to address this problem. This requires the development of a measurement and standards infrastructure to establish the essential linkages between physico-chemical properties, exposure, and hazards. The NIST program will enable industry to innovate, remain competitive, ensure worker safety, and comply with regulations and the public to establish trust in nanotechnology and reap the benefits of nanomaterials for health and the economy.
NIST’s role in addressing the problem is to establish the essential measurement science and to develop and disseminate critical measurement technology for determining physico-chemical and toxicological properties of nanomaterials and products that incorporate nanomaterials, and assessing potential release of nanomaterials, throughout all stages of their life cycles—from nanomaterial manufacture through product fabrication, distribution, storage, use, recycling, and disposal. NIST is the lead federal agency for physico-chemical property measurements and standards, and has essential world-class expertise and state-of-the-art facilities.
Session We-5: Report from IPWGN
Chair, James Hutchby (US)
Toshiro Hiramoto (Univ. Tokyo) Report from IPWGN
International Planning Working Group for Nanoelectronics (IPWGN) is a task force WG in INC. The mission of IPWGN is to identify areas where collaboration and cooperation between regional nanoelectronics programs can expedite the development of applicable technologies. In this presentation, regional research vectors, publicly funded regional programs, potential research gaps, and areas where collaboration and cooperation between regions will accelerate programs will be reported.
Poster Session Poster preview
Chair, K. Wang (US)
18:20-18:30 Joachim Pelka (FhG/VμE), Europe
18:00-18:10 Noburu Fukushima (Toshiba), Japan
18:10-18:20 George Bourianoff (Intel), US

Thursday, May 19, 2011

Speaker (Affiliation) Presentation Title and Abstract
Session Th-1: Green Nanotechnology
Chair, Joachim Pelka (Europe), Hiro Akinaga (Japan)
Kouchi Zhang (Philips Lighting) Solid State Lighting – The opportunities and challenges for micro/nanoelectronics
Tsuyoshi Ohnishi (NIMS) Nanometer-scale interfacial design for solid-state lithium batteries
Use of solid electrolytes is a fundamental solution to the safety issue of lithium-batteries, which is originated from their combustible organic electrolytes. However, it lowers the power density instead even after the development of highly-conductive solid electrolytes. We found that the rate-determining step is in the interface between the cathode and solid electrolyte. A new design of the interface based on “nanoionics”, in which an oxide solid electrolyte is interposed, drastically increased the power density of the solid-state lithium batteries as large as that of commercialized batteries with liquid electrolytes.
Masaru Kurihara (Toray) The World's Water Resources:A Paradigm Shift and A Task Facing Membrane Process
Global population increase affords the watershortage or water scarcity matter seriously. Realizinig the new growth strategy by Japanese cabinet shows Environment & Energy including "Green Innovation". 4 differnt Membranes (Reverse Osmosis Membrane,Nanofiltration Membrane, Ultarafiltration & Microfiltration Membrane) for Water Treatment are very useful or best way to overcome the water scarcity matter in 21 century. These membranes are used by Integrated Membrane System for such as Seawater Desalination, Drinking Water production from liver water, Waste Water Reclamation. Thus,Water Production through the membrane are a widely accepted now and useful ways from the Industry & Tap Water to Agriculture application by recycling and reuse.
John Cowie (The American Forest & Paper Association)  
Panel discussion - International Collaboration

Chair, Paolo Gargini (US)

Laurent Malier (CEA-Leti, Europe)
Andreas Wild (ENIAC, Europe)
G. Ichiara (Nagoya Univ., Japan)
Steve Hillenius (SRC, US)

INC8 Announcement

Toshihiko Kanayama (AIST, Japan)

Concluding remarks

Mike Roco (NSF, US)