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Alain E. Kaloyeros
Dr. Alain E. Kaloyeros
Chief Executive Officer and Officer in Charge, the newly merged SUNY CNSE/SUNYIT institution; Professor of Nanoscience

Professional Background:
  • Ph.D., Experimental Condensed Matter Physics, University of Illinois at Urbana-Champaign, 1987
Awards:
  • Tech Valley Business Hall of Fame, 2011
  • Envoy Salute Award, Albany-Colonie Chamber of Commerce, 2010
  • The Global Vision Award, Tech Valley Global Business Network, 2009.
  • "Explore Discover Imagine" Award, Children's Museum of Science and Technology (2008)
  • "Tech Valley's Hot 10" list (2007, 2005, 2003)
  • Tech Valley Summit MIKE (Mentorship, Innovation, Knowledge, and Entrepreneurship) Award on behalf of the CNSE executive leadership team (2005)
  • Research Foundation Partnership in Leadership Award on behalf of the Center of Excellence in Nanoelectronics and Nanotechnology (2004)
  • Excellence in the Pursuit of Knowledge Award, SUNY Research Foundation (2003)
  • Outstanding Inventor Award, SUNY Research Foundation (2002)
  • R&D 100 Award for one of the Most Technologically Significant Inventions of 2001
  • Citizen of the University Award (1999)
  • Center for Economic Growth Enterprise Award (1997)
  • Academic Laureate Award, University at Albany Foundation (1995)
  • Presidential Young Investigator Award, NSF (1991-96)
  • Research Initiation Award, NSF (1990-92)
  • Faculty Research Award, University at Albany (1989-91)
Research Experience:
  • Thermal, plasma, and high density plasma physical and chemical vapor deposition of advanced materials in tailored thin film and multilayered structure forms.
  • In-situ and ex-situ electron-, ion-, and x-ray characterization of film surfaces, interfaces, and bulk physical, chemical, and electrical properties.
  • Nanoscale design and fabrication of advanced electronic, optoelectronic and optical single and multilayered ultrathin films and nanocoatings for integration in computer chips, biological sensors, mitrosystems, and energy devices.
Selected Research Achievements:
  • CVD Cu based multilayered metallization scheme for sub-quarter-micron device generations.
  • Low temperature, plasma promoted CVD Al interconnects for the 0.25 micrometer computer chip technology.
  • High temperature superconductor interconnect technology for high speed cryoelectronic devises.
  • Low temperature CVD GaN on Si for optoelectronic applications.
  • Ti-based refractory coatings for use as diffusion barrier/glue layer in ultra-large scale integration (ULSI) computer devices.